Curing of unsaturated polyester resins—effects of pressure

The effects of pressure ranging from 0.1 to 6.21 MPa (0–900 psig) on the curing of unsaturated polyester resins at 110°c were investigated by an approach of integrated reaction kinetics-rheology-morphology measurements using a pressure differential scanning calorimeter (DSC), an infrared spectrophotometer (IR), a Haake rheometer, and by using scanning electron microscopy (SEM). Increasing pressure was found to delay the gel effect, and a previously unknown plateau of kinetic-controlled region in the initial portion of the DSC rate profile was observed. The plateau region was mainly attributed to the crosslinking of C ? C double bonds inside the microgel particles, as revealed by the conversions of styrene and polyester C ? C bonds measured by IR, gel conversion data and SEM micrographs. The mechanisms of reaction kinetics both at atmospheric pressure and under pressures have also been elucidated by the progress of buildup of microgel structures.     

Styrene maleic anhydride and styrene glycidyl methacrylate copolymers as in situ reactive compatibilizers of polystyrene/nylon 6,6 blends

The reactive type copolymers styrene maleic, anhydride (SMA) and styrene glycidyl methacrylate (SG) are used as in situ compatibilizers in polyblends of polystyrene (PS) and nylon 6, 6 (N66). Both copolymers can react with N66 to form copolymers as effective compatibilizers to reduce interfacial tension and increase phase adhesion. However, the toughness of the compatibilized blends is significantly lower than of the corresponding noncompatibilized blends. Only a small fraction of SMA is actually reacted in a typical melt blending, and SG copolymer seems to be more reactive than SMA. The unreacted copolymers are expected to be distributed mostly in the PS phase because of their structural similarity. The reacted copolymers are not exclusively distributed along the interface; some may distribute in both matrices. SMA is known as a very brittle polymer, and the way it is distributed can greatly influence the toughness of the resulting blends. PS is also very brittle relative to N66, and moreover a high amount of SMA in the N66 phase is detrimental since N66 is responsible for the toughness of PS/N66 blends. The better compatibilized blends have the tendency to bring more SMA and reacted SMA into the N66 phase. The relative detrimental effect on the inherent toughness of N66 is much more severe than in case of PS, if they contain the same amount of SMA. This study demonstrates that polyblends with good compatibilizers do not guarantee toughness improvement. The way the compatibilizers affect the inherent properties of the matrix needs also to be taken into consideration.     

An extensible two‐phase high voltage‐boosting converter with automatic current balance

In this study, an extensible 2‐phase interleaved high step‐up converter with automatic current balance is presented. This converter uses coupled inductors and energy‐transferring capacitors to improve the voltage gain of the traditional 2‐phase interleaved boost converter as well as employs these energy transferring capacitors to do automatic current balance. Furthermore, the voltage gain can be enhanced not only by adjusting the turns ratio but also by increasing the numbers of phases, diodes, and energy‐transferring capacitors. Therefore, it can be used in high input current and high step‐up voltage applications. In this paper, the basic operating principles of the proposed converter are described and analyzed, and finally, its effectiveness is demonstrated by experiment. In addition, the field‐programmable gate array, named EP13T100C8N and manufactured by Altera Co, is used as a control kernel, and an experimental prototype, with input voltage of 12 V, output voltage of 200 V, and rated output power of 200 W, is given to provide the effectiveness of the proposed converter.     

Application-Oriented Low-Side Gate Drivers

This paper presents three types of low-side gate drivers to drive n-channel power metal-oxide-semiconductor field-effect transistors (MOSFETs). Most important of all, each gate driver has a single positive-voltage source fed, and any one of these three types is used according to applications. In addition, the main purpose of the proposed gate drivers is to reduce the losses created from power MOSFETs. In this paper, the detailed operating principles of the proposed gate drivers are illustrated, along with some experimental results provided to verify the feasibility of the proposed topologies.     

Ion exchange and electrochemical evaluation of the microporous phosphate Li9Fe7(PO4)10

A new lithium iron(III) phosphate, Li₉Fe₇(PO₄)₁₀, has been synthesized and is currently under electrochemical evaluation as an anode material for rechargeable lithium-ion battery applications. The sample was prepared via the ion exchange reaction of Cs₅K₄Fe₇(PO₄)₁₀1 in the 1 M LiNO₃ solution under hydrothermal conditions at 200 °C. The fully Li⁺-exchanged sample Li₉Fe₇(PO₄)₁₀2 cannot yet be synthesized by conventional high-temperature, solid-state methods. The parent compound 1 is a member of the Cs_9−xK_xFe₇(PO₄)₁₀ series that was previously isolated from a high-temperature (750 °C) reaction employing the eutectic CsCl/KCl molten salt. The polycrystalline solid 1 was first prepared in a stoichiometric reaction via conventional solid-state method then followed by ion exchange giving rise to 2. Both compounds adopt three-dimensional structures that consist of orthogonally interconnected channels where electropositive ions reside. It has been demonstrated that the Cs_9−xK_xFe₇(PO₄)₁₀ series possesses versatile ion exchange capabilities with all the monovalent alkali metal and silver cations due to its facile pathways for ion transport. 1 and 2 were subject to electrochemical analysis and preliminary results suggest that the latter can be considered as an anode material. Electrochemical results indicate that Li₉Fe₇(PO₄)₁₀ is reduced below 1 V (vs. Li) to most likely form a Fe(0)/Li₃PO₄ composite material, which can subsequently be cycled reversibly at relatively low potential. An initial capacity of 250 mAh/g was measured, which is equivalent to the insertion of thirteen Li atoms per Li_9+xFe₇(PO₄)₁₀ (x = 13) during the charge/discharge process (Fe²⁺ + 2e → Fe⁰). Furthermore, 2 shows a lower reduction potential (0.9 V), by approximately 200 mV, and much better electrochemical reversibility than iron(III) phosphate, FePO₄, highlighting the value of improving the ionic conductivity of the sample.     

Carbazole and benzimidazole/oxadiazole hybrids as bipolar host materials for sky blue,green, and red PhOLEDs

Two novel bipolar host materials (CBzIm and COxaPh) comprising of a hole-transport (HT) carbazole core functionalized with electron-transport (ET) moieties (benzimidazole/oxadiazole) at C3 and C6 positions have been synthesized. Their thermal, photophysical, electrochemical properties, and carrier mobilities were characterized. Theoretical calculations revealed that the HOMO orbitals were generally delocalized over the hole- and electron-transport moieties for both CBzIm and COxaPh, whereas the LUMO orbitals distribution only involved one benzimidazole moiety in CBzIm instead of fully delocalization over the whole polar moieties for COxaPh, which is consistent with the observation of good hole mobilities for both hosts and better electron mobility for COxaPh over CBzIm. CBzIm with high E_T (2.76 eV) is suitable to serve as a blue phosphor host, where a sky blue phosphor (DFPPM)₂Irpic exhibiting superior properties than those of popular blue emitter FIrpic was used to give highly efficient phosphorescent OLEDs, achieving a maximum external quantum efficiency (η_ext) of 15.7%. The better π-delocalization of COxaPh led to a lower triplet energy (E_T = 2.65 eV), which can be used to accommodate green and red phosphors, providing excellent device performance with η_ext as high as 17.7% for green [(ppy)₂Ir(acac)] and 20.6% for red [Os(bpftz)₂(PPh₂Me)₂], respectively.     

Method for determining the junction temperature of alternating current light-emitting diodes

A numerical simulation was used to simulate the temperature distribution during AC and DC operations of an alternating current light-emitting diode (AC LED). The relationship between the junction temperature and the temperature at the centre of the bottom surface of the submount of an AC LED was measured under DC operation. This relationship was confirmed by numerical simulation. The numerical results were consistent with the experimental observations in that the temperature at the centre of the bottom surface of the submount was insensitive to the current variations that occur in an AC LED, probably because of the large mass of the submount. However, it was difficult to measure the temperature oscillation at the junctions in an AC LED, although this oscillation can be clearly seen in the numerical results. Thus, the authors propose a formula for predicting the range of the oscillating junction temperature for an AC LED.     

Molecular beam epitaxy growth of TmP/GaAs and transistor action inGaP/TmP/GaAs heterostructures

The growth of thulium phosphide (TmP) by molecular beam epitaxy (MBE) on GaAs substrate is reported. Good epilayer quality was demonstrated through X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM) analysis. The closely lattice matched TmP layer was n-type with an electron concentration of 1.6×10²¹ cm^-3 and a room temperature mobility of 4.8 cm²V^-1s^-1. The Schottky barrier height determined from 1/capacitance² (1/C²) versus voltage (V) measurements is about 0.81 eV which agrees well with the value obtained through the current-voltage (I-V) measurements. In this work, we also report transistor action in a GaP/TmP/GaAs structure, for which chemical bonding techniques were employed. From I-V measurements, a common base current gain α≈0.55 at V_CB=0 was obtained at room temperature     

Effects of alkali soluble resin on the emulsion polymerization of butyl methacrylate

In this work, alkali soluble resin (ASR) was evaluated as a surfactant in the emulsion polymerization of butyl methacrylate (BMA). Kinetic analysis indicated that the ASR surfactant retarded the reaction rate and reduced the average number of radicals per latex particle. Since the particle nucleation period proceeds until the disappearance of droplets, Interval II does not exist in this system. Experimental results show that the particle number depends on the 0.31 and 0.51 powers of the ASR and KPS concentration, respectively. The particle size distribution of the latex becomes broad with the increase of the ASR concentration in the emulsion polymerization. This phenomenon explains why the period of the particle nucleation is proportional to the ASR concentration used in the reaction.     

Secondary electron imaging in the variable pressure scanning electron microscope

Secondary electron imaging is not possible in the variable pressure scanning electron microscope because the mean free path of the secondaries in the gas is too short to permit them to reach the detector. This paper therefore investigates an alternative strategy for producing an image containing significant amounts of secondary electron contrast. This involves modifying the microscope by the addition of a biased electrode above the sample and then collecting a specimen current signal. This system, originally described by Farley and Shah (1988), is found to produce true secondary electron detail over a wide range of conditions.